FR – Page 22 – TechConnect Briefs

Development of a specific micro/nanodevice validating the concept of molecular biopsy

Berger F., Bouamrani A., Cosnier M., Martin F., Caillat P., Benabid A.L., Inserm, FR

The nanomedicine concept implies early detection at the molecular level and molecular characterisation to implement a specific therapy. In this context, the development of micro/nanotool devoted for intra-tissular characterisation is indispensable. We first demonstrated that [...]

Vibrational spectroscopy of nanoscale needle shaped histamine

Sonois V., Faller P., Bacsa W.S., Fazouan N., Estève A., University Paul Sabatier, FR

Amino acids in aqueous solutions have low Raman signals and are difficult to detect at low concentrations. To increase Raman signals one often uses UV excitation. We find that nano-needels can be grown from droplets [...]

Modulation Of Nanochannels Hydration In Lipid Cubic Phases Studied by SANS and SAXS

Angelov B., Angelova A., Angelova A., Garamus V., Lebas G., Funari S., Lesieur S., Ollivon M., Couvreur P., CNRS UMR8612, FR

The hydration of a bicontinuous lipid cubic phase, respectively the sizes of the aqueous nanochannels formed in such a supramolecular structure of hydrated monoolein, was modulated by incorporation of small nonionic guest molecule (octyl glucoside). [...]

Depth resolution capabilities using optical standing waves near surfaces

Neumayer F., Bacsa W.S., University Paul Sabatier, FR

The physics of standing waves has been explored for more than 50 years. Standing wave fields can be used to selectively enhance luminescence or enhance the Raman signal. We explore here the optical standing wave [...]

Heating double wall carbon nanotubes with UV photons

Puech P., Bassil A., Flahaut E., Bacsa W.S., University Paul Sabatier, FR

Light absorption leads inevitably to electronic excitation and inelastic electron scattering, creating phonons and resulting in the increase of the lattice temperature. By using photons with energies significantly above the fundamental band gap of the [...]

Static Analog Design Methodology

Guigues F., Rudolff F., Kussener E., L2MP UMR 6137 CNRS - ISEN-Toulon, FR

When strong constraints of supply voltage (< 1V ) and bias current (< 100nA) are required, the only way to meet design’sspecifications without using huge silicon area consists on decreasing transistor’s inversion level and therefore [...]

Compact modeling and performance analysis of Double-Gate MOSFET-based circuits

Tintori O., Munteanu D., Loussier X., Autran J-L, Regnier A., Bouchakour R., L2MP, FR

Double-Gate (DG) MOS transistors and related multiple-gate device architectures are nowadays widely identified as one of the most promising solutions for meeting the roadmap requirements for the end-of-the-roadmap integration. One of the identified challenges for [...]

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