CH – Page 13 – TechConnect Briefs

Hybrid Atomistic-Continuum Fluid Mechanics

Werder T., Walther J.H., Kotsalis E., Gonnet P., Koumoutsakos P., ETH Zürich, CH

We outline a multiscale algorithm for the simulation of dense uids that couples molecular dynamics and continuum fluid dynamics. The coupling between the two models is realized by a common overlap domain and by the [...]

Wetting and Hydrophobicity of Nanoscale Systems with Impurities

Gonnet P., Zimmerli U., Walther J.H., Werder T., Koumoutsakos P., ETH Zürich, CH

Molecular dynamics simulations are performed to study the influence of surface and fluid impurities on water-carbon interfaces. In order to quantify these interactions we consider both the canonical problem of wetting of a doped flat [...]

A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

Schmithusen B., Gartner K., Fichtner W., Integrated Systems Laboratory, ETHZ, CH

A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for [...]

Standardization of Compact Device moding in High Level Description Language

Lemaitre L., McAndrew C., Grabinski W., Motorola, CH

This paper proposes a methodology based on hardware description languages (HDL) to efficiently develop compact device models. After an introduction to compact device modeling we describe Verilog-AMS, a popular HDL. Then we show how Verilog-AMS [...]

A Basic Property of MOS Transistors and its Circuit Implications

Vittoz E., Enz C., Krummenacher F., Swiss Center for Electronics & Microtechnology, CH

The MOS transistor drain current is the (linear) superposition of independent and symmetrical effects of source and drain voltages. This basic property is not affected by the geometry or symmetry of the transistor, by the [...]

On the Validity of the No-Slip Condition in Nanofluidics

Koumoutsakos P., Jaffe R.l., Werder T., Walther J.H., Swiss Federal Institute of Technology Zürich, CH

In a collaboration with experimental groups at NASA and ETH Zürich we conduct computational studies towards the development of biosensors in aqueous environments. Examples include arrays of carbon nanotubes that may operate as artificial stereocillia [...]

PCR Micro-Voume Device for Detection of Nucleic Acids

Auroux P-A, Day P., Niggli F., Manz A., Kinderspital, CH

The polymerase chain reaction (PCR) is an enzyme-mediated nucleic acid amplifer process that is employed extensively throughout the medical and biological sciences. The technique has risen to acclaim largely through its exquisite sensitivity, but an [...]

Hydrodynamics of Carbon Nanotubes Contact Angle and Hydrophobic Hydration

Werder T., Walther J.H., Koumoutsakos P., Inst. of Computational Sciences, ETH, CH

Molecular dynamics simulations are used to study the hydrophobic-hydrophilic behavior of carbon nanotubes in water. We report contact angles for tube diameters ranging from 25 to 75 and for droplets containing up to 4632 water [...]

Computing Excitons in V-shaped Quantum Wires Including Band-Structure and Dielectric Effects : Binding energies and polarization anisotropy of the bright A1, B1, A2 excitons

Dupertuis M.A., Oberli D.Y., Kapon E., Swiss Federal Institute of Technology-EPFL, CH

We demonstrate an efficient numerical scheme for the computation of the excitonic optical response of actual GaAs/AlGaAs quantum wire structures including a large set of relevant effects; structural, valence band-mixing, dielectric and many-body effects can [...]

New Compact Model for Generation Drain Current Transients in Weak and Moderate Inversions of Submicron Floating-Body PD SOI MOSFETs

Ionescu A.M., Munteanu D., Swiss Federal Institute of Technology-EPFL, CH

In this paper, generation-type drain current transients, in advanced (down to 50nm gate-length) floating-body PD SOI MOSFETs are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for [...]