The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed from a series of the R-G current measurement and developed physics expression. As the result, the interface states can be extracted by the relationship between the net increase value of the maximum substrate current (ΔIpeak) and stress time; and the oxide trap can be reflected by the drift of gate voltage (ΔVg) corresponding toΔIpeak.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 168 - 171
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems