Papers:
Three-dimensional Deformation Analysis of MEMS/NEMS by means of X-ray Computer-Tomography
High resolution x-ray computertomography allows the non-destructive 3D-analysis of materials and compounds. Therefore, information of the internal structure of the material or the device becomes available, which are otherwise only gained by destructive analysis. But [...]
Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions
Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.
Reliability Analysis of Low Temperature Low Pressure Ag-Sinter Die Attach
The amount of heat which has to be dissipated from power electronics and microprocessors increases more and more due the ongoing miniaturization. Therefore new interface materials with high electrical and thermal conductivity have to be [...]
Fracture mechanical test methods for interface crack evaluation of electronic packages
The ongoing development of highly integrated electronic packages leads to a steadily increasing number of material interfaces within a package. In combination with increasing harshness (vibration, humidity, temperature) of the system environment the reliability of [...]
Automated test system for in-situ testing of reliability and aging behaviour of thermal interface materials
The on-going need for miniaturization and speed in electronics industry has brought a requirement for better performing thermal management systems. Therefore we have developed a test stand to characterize the aging behaviour of most common [...]
Correlation of Microstructure and Tribological Properties of Dry Sliding Nanocrystalline Diamond Coatings
Nanocrystalline diamond (NCD) offers great potential for many micro-mechanical systems, particularly where low friction, reliability and mechanical integrity are of great importance. The reduction of grain size in NCD films to several nanometers is, however, [...]
FinFET reliability issue analysis by forward gated-diode method
The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed [...]
Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance
The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF [...]
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation [...]
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current
In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift [...]
Cryostructuration of latexes
The presented study concerns with structurization of dispersed phase of polymer latexes during their freezing-thawing. It is known that freezing might have disturbed the latexes aggregate stability. In the presented work it was established that [...]
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 978-1-4398-7139-3