He J., Zhang X., Chan M., Wang Y.
Peking University, CN
Keywords: carrier-based model, compact modeling, device physics, non-charge-sheet, non-classical MOSFETs, surrounding-gate MOSFET
A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration. From this model, the different dependences of the surface potential, centric potential, inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically and then the predicted IV characteristics are compared with the 3-D numerical simulations. The analytical results of the model presented also show in a good agreement with the 3-D simulation, demonstrating the model is valid for all operation regions and traces the transition between them without any need for the fitting parameter.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 788 - 791
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1