Papers:
Complex Potentials, Dissipative Processes and General Quantum Transport
Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]
Simulation Study of ZnTe-CdZnTe Based Asymmentric Step Strained Layer Quantum Well Infrared Photo-Detectors
A AnTe - CdZnTe system based asymmetric step quantum well structures have been analyzed and the effects of step discontinuity, well discontinuity, well width, and step with on absorption coefficient and detectivity, which have a [...]
Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices
The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]
An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future
A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]
Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS
The continued evolution of Si technology hinges to a large extent on the ability to maintain high on-currents while achieving low off-currents. As we move from sub-micron to nanoscale technology, it is not at all [...]
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems, Nanoelectronics
ISBN: 0-9666135-4-6