Papers – Page 84 – TechConnect Briefs

Fabrication and Characterization of Nanoscale Heating Sources (“Nanoheaters”) for Nanomanufacturing

Jogdand H., Gulsoy G., Ando T., Chen J., Doumanidis C.C., Gu Z., Gulsoy G., Rebholz C., Wong P., University of Massachusetts-Lowell, US

In macroscale manufacturing, active use of heat to alter the geometry, structure and properties of solids is central to material removal, deposition, joining, shaping, and transformation processes. However, traditional heat sources encroach difficulties with fine [...]

Numerical Stress Analysis on Thermal Nano-Imprint Lithography

Cho B-G, Park S.Y., Won T., Inha University, KR

This paper investigations the stress distribution of the polymer through numerical simulations during thermal NIL. Numerical results explained characteristic phenomena which never appear in continuous line-and-space patterning cases. We believe that numerical simulations with more [...]

Ab-initio Calculations of Uniaxially and Biaxially Tensile Stress Effect

Kim Y.K., Park S.Y., Won T., Inha University, KR

In this paper, we present an ab-initio study on energy configurations, minimum energy path (MEP), and migra-tion energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer for the first [...]

Autonomous Nanoscale Motion Through Catalysis

Sen A., Pennsylvania State University, US

Nanoscale moving systems are currently the subject of intense interest due in part to their potential applications in nanomachinery, nanoscale assembly, robotics, tribology, fluidics, and chemical/biochemical sensing. Most of the research in this area has [...]

Fluidic Molecular Processing Devices

Lyshevski M.A., Lyshevski S.E., Lyshevski M.A., Lyshevski S.E., Microsystems and Nanotechnologies, US

We study fluidic molecular processing devices and modules to perform processing and related tasks. These developments are envisioned to be utilized in foreseen processing and memory systems. We consider various fluidic devices as modular primitives [...]

High speed Resonant Tunneling Diode based on GaN & GaAs: A modelling & simulation approach

Arjun V., Sikdar D., Chaubey V.K., Birla Institute of Technology & Science, IN

The investigation of tunneling of particles through potential barriers in semiconductor quantum wells has recently attracted much attention. Special focus is laid on resonant tunneling structures because of its importance in the field of nanoscience [...]

Reliability of Nano Devices and Systems: Nuclear Spins of Stable Magnetic Isotopes as the Reliability Factor of Biomolecular Nanoreactors

Koltover V.K., Institute of Problems of Chemical Physics, Russian Academy of Sciences, RU

The trend of “nanoscaling” brings engineering down to the dimensions of molecular structures. However, it also poses the problem of how to create a reliable system from molecular components experiencing permanent fluctuations? Fortunately, engineers may [...]

An FPGA Architecture Using Vertical Silicon Nanowire Transistors

Bindal A., Wickramaratne D., Hamedi-Hagh S., San Jose State University, US

This study presents an FPGA architecture using vertical silicon nanowire transistors. A complete picture from designing ultra low-power silicon nanowire transistors to their use in an FPGA architecture is given. Post-layout, worst-case rise delay changes [...]

Gold Nanorods: Synthesis and Modulation of Optical Properties

Tiwari N.R., Kalele S.A., Kulkarni S.K., University of Pune, IN

Metal nanoparticles offer a wide area of application owing to their size and shape dependent optical properties. Recently, there has been significant interest in gold nanorods due to their potential application in the field of [...]

Magnetotransport Properties and Tunnel Effect of Thin Film Nano-Structures

Neamtu J., Volmer M., Medianu R.V., National Institute for Research&Development in Electrical Engineering, RO

The investigation of magnetotransport and tunnel effect of magnetic nanostructures plays an important role in design of micro&nanosystems for spintronics. The nano-structures as FM/NM/FM/AFM were deposited by magnetron-sputtering on the oxidized Si wafers, as continuous [...]