Papers – Page 27 – TechConnect Briefs

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

Jungemann C., Grasser T., Meinerzhagen B., Technische Universität Braunschweig, DE

The shrinking of the device dimensions below 100nm is pushing the classical TCAD tools like the drift-diffusion (DD) or hydrodynamic (HD) models to their limits. While the impact of the shrinking on the accuracy of [...]

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., Carette J., McMaster University, CA

Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both [...]

Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures

Ashok A., Akis R., Vasileska D., Ferry D.K., Arizona State University, US

Spintronics is a new branch of electronics which involves the active control and manipulation of spin degrees of freedom in solid-state devices. Spin transport differs from charge transport as spin is a non-conserved quantity in [...]

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes

Vasenkov A.V., Fedoseyev A.I., Kolobov V.I., Hong Ki-Ha, Choi H.S., Kim J., Kim K.H., Kim J., Kim K.H., Lee H.S., Shin J-K, CFD Research Corporation, US

The current rapid development of nanotechnology has created a significant interest to predict the behavior of materials from the atomic to the engineering scales. However, it was found that such prediction is a very challenging [...]

Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures

Hasanuzzaman M., Haddara Y.M., McMaster University, CA

Intermixing at heterointerfaces and the broadening of the SiGe layer in a Si/SiGe/Si single quantum well (SQW) structure can be detrimental to device performance. Thus it is important to develop predictive models for interdiffusion phenomena [...]

Kinetic Monte Carlo Simulation of Defect-Mediated Organization in Quantum Dot Self-Assembly

Gao D., Kaczynski A., Jaszczak J.A., Michigan Technological University, US

A good understanding of quantum dot (QD) self assembly not only has the potential to augment standard materials patterning technologies but also has applications in industrial nanostructure fabrications. Many observations and insights about self-assembled quantum [...]

Through the Nano-Needle’s Eye: Models, Examples, and a Template for the Successful Transition from R&D to Commercialization

O'Halloran M., IDC, US

As small-scale technologies emerge and are slated for commercialization, the critical challenge is scaling up prototypes into viable commercial applications. Many new technologies have faced this challenge, and many lessons learned from those experiences can [...]

The Austrian NANO Initiative: Small Country with Strong Expertise

Haas M., Glenck E., Austrian Research Promotion Agency (FFG), AT

The Austrian NANO Initiative is the multi-annual public funding programme for nanoscale sciences and nanotechnology. It coordinates different action lines at national and regional levels. The Austrian Research and Promotion Agency (FFG) runs the programme [...]

Nanobiotechnology: Responsible Action on Issues in Society and Ethics

Bennett D.J., Schuurbiers D., European Federation of Biotechnology, NL

The overall aim of this initiative is both, firstly, to anticipate the societal and ethical issues likely to arise as nanobiotechnologies develop and, secondly, to use the lessons from the European GM debate to respond [...]