Papers – Page 13 – TechConnect Briefs

First-Principles Molecular-Dynamics Simulations of a Hydrous Silica Melt: Hydrogen Diffusion Mechanisms and Electronic Properties

Pohlmann M., Schober H., Benoit M., Kob W., Institut Laue-Langevin, FR

We study a sample of liquid silica containing 3.84 wt.% H20 with ab initio molecular dynamics simulation in its liquid state at temperatures of 3000 K and 3500 K. at these temperatures the liquid can [...]

Wetting and Hydrophobicity of Nanoscale Systems with Impurities

Gonnet P., Zimmerli U., Walther J.H., Werder T., Koumoutsakos P., ETH Zürich, CH

Molecular dynamics simulations are performed to study the influence of surface and fluid impurities on water-carbon interfaces. In order to quantify these interactions we consider both the canonical problem of wetting of a doped flat [...]

A Schrödinger-Poisson Solver for Modeling Carbon Nanotube FETs

John D.L., Castro L.C., Pereira P.J.S., Pulfrey D.L., Department of Electrical and Computer Engineering, CA

Carbon nanotubes are attracting great interest for their use in nanoscale electronic devices. Recent modeling efforts of carbon nanotube field-effect transistors (CNFETs) have been successful in examining the subthreshold behaviour of these devices through a [...]

Translating the Integration Challenges to Molecular Device Requirements – Analysis of Scaling Constraints in Molecular Random Access Memories

Amsinck C.J., Di Spigna N.H., Nackashi D.P., Franzon P.D., North Carolina State University, US

Integrating molecular memory devices into large scale arrays is a key requirement for translating the miniature size of molecular devices into ultradense memory systems. This in turn imposes constraints on the individual molecular memory devices. [...]

Fault Detection and Diagnosis Techniques for Molecular Computing

Tahoori M.B., Mitra S., Northeastern University, US

Fault detection and diagnosis techniques that are essential for defect tolerance, fault tolerance and self-repair of molecular computing systems are discussed. These techniques enable robust molecular computing system design protected from manufacturing defects and run-time [...]

Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due [...]

Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

Lassen B., Lew Yan Voon L.C., Melnik R., Willatzen M., Worcester Polytechnic Institute, US

Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.

Discontinuous Gold Films for Nanocell Memories

Nackashi D.P., Di Spigna N.H., Winick D.A., Amsinck C.J., Cheng L., Tour J.M., Franzon P.D., North Carolina State University, US

An important component to the nanocell, among other self-assembled networks, is the fabrication of a framework by which molecular elements can be interconnected. This framework must be nanometric in scale, created in a material suitable [...]

A Sub-40nm Nanostructured La0.7Sr0.3MnO3 Planar Magnetic Memory

Arnal T., Bibes M., Lecoeur Ph., Mercey B., Prellier W., Haghiri-Gosnet A.M., Institut d'Electronique Fondamentale IEF/UMR8622, FR

A single-step nanolithography planar process, which allows generating the core-element of a spin-polarized magnetic memory in the fully spin-polarized La0.7Sr0.3MnO3 (LSMO) manganite, is reported. Taking benefit of the proximity effects due to backscattered electrons, a [...]

Modeling of Nanoelectronic and Quantum Devices

Ferry D.K., Akis R., Gilbert M.J., Speyer G., Arizona State University, US

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have [...]