Papers – Page 8 – TechConnect Briefs

Computing Excitons in V-shaped Quantum Wires Including Band-Structure and Dielectric Effects : Binding energies and polarization anisotropy of the bright A1, B1, A2 excitons

Dupertuis M.A., Oberli D.Y., Kapon E., Swiss Federal Institute of Technology-EPFL, CH

We demonstrate an efficient numerical scheme for the computation of the excitonic optical response of actual GaAs/AlGaAs quantum wire structures including a large set of relevant effects; structural, valence band-mixing, dielectric and many-body effects can [...]

Residual Stress Modeling in Quantum Dots

Vlahovic B., Wang K., Suslov V., Yakovlev S.L., Otieno C., Soldi A., Dutta J., North Carolina Central University, US

One of the possible applications of the quantum dots is in a new generation of photovoltaic cells. Theory predicts the efficiency of these based solar cells to be up to 63 percent, which is substantially [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Mohseni K., Shakouri A., University of Colorado, US

The hydrodynamic model of electron transport is revisited. By rearranging the governing equations a new set of equations in terms of the electron vorticity and internal energy is derived. The advantage of the new set [...]

Principles of Electron Wave Computing using Quantum Resistor Networks

Wu C.H., University of Missouri-Rolla, US

Quantum resistor networks are interconnected thin wires or electron conducting wave guides. A multiple input-output quantum network is capable of performing massive parallel computing, similar to optical computing. Basic logic functions and arithmetic computation have [...]

Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

Melnik R.V.N., Willatzen M., University of Southern Denmark, DK

The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Electronic Structure of Quantum Dots

Hines C., McCarthy S.A., Wang J.B., Abbott P.C., The University of Western Australia, AU

This paper presents a detailed calculation of the electronic structure of quantum dots with various geometries. In particular, non-circular quantum dots are examined and their characteristic properties analysed. In addition, the importance of electron-electron spin [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK

As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]