Papers – Page 7 – TechConnect Briefs

Size Effects and Scaling in Misfit Dislocation Formation in Self Assembled Quantum Dots

Friedman L.H., Weygand D.M., van der Giessen E., University of Groningen, NL

Growth islands due to large mismatch strain arising in Stranski-Krastanow (SK) and Volmer-Weber (VW) ﬁlm growth can be used to produce large arrays of quantum dots. This same mismatch strain may also cause misﬁt dislocations [...]

Nanomanipulation and Characterization of Individual Carbon Nanotubes

Ruoff R., Northwestern University, US

A new tool that operates in a scanning electron microscope for measuring the mechanics of nanostructures is briefly presented, and its use to measure the response to tensile loading of carbon nanotubes is outlined.

Phase Field Modeling of Dislocation Network Coarsening, Dislocation – Impurity, and Dislocation – Precipitate Interactions

Shen C., Kazaryan A., Anderson P.M., Wang Y., Ohio State University, US

Interactions of dislocations with one another and their interactions with impurities and precipitates determine the behavior of plastic deformation of crystalline materials. In this presentation, we will discuss recent advances in phase field modeling of [...]

Structural and Electronic Properties of Quantum Dot Surfaces

Galli G., Puzder A., Willilamson A.J., Grossman J.C., Pizzagalli L., Lawrence Livermore National Laboratory, US

We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum Monte Carlo [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Puchner H., Cypress Semiconductor, US

Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory [...]

Spatially Resolved Electron Energy-Loss Spectroscopy, a Tool to Verify Electronic Structure Calculations in Nanostructured Materials

Duscher G., Plitzko J., Kisielowski C., Buzko R., Pennycook S.J., Pantelides S.T., North Carolina State University, US

Modern mcroscopy allows a direct comparison between experimental results and the atomic and electronic structure as obtained by state of the art ab-initio calculations. The phase reconstruction technique allows one to determine the positions of [...]

Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

Xie W., Guangzhou University, CN

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated using the method of few-body [...]

Gain in a Semiconductor Waveguide Qubit

Harris J., Akis R., Ferry D.K., Arizona State University, US

Recently, it has been suggested that it may be possible to use combinations of coupled quantum wire waveguides to form quantum computational qubits [1],[2]. However, there are several related problems intrinsic to this approach. First, [...]