Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots


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Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated using the method of few-body physics. This configuration is called a barrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground state of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Pages: 235 - 238
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-6-3