Papers – Page 4 – TechConnect Briefs

Simulation of Carbon Nanotube-based Nanoelectromechanical Switches

Dequesnes M., Rotkin S.V., Aluru N.R., University of Illinois at Urbana-Champaign, US

We study the pull-in voltage characteristics of several multiwall nanotube electromechanical switches such as suspended carbon nanotubes over a graphitic ground lectrode. Electromechanical analysis has been performed by accounting for three coupled energy domains: elastostatics, [...]

Femtosecond Energy Concentration in Nanosystems Coherently Controlled by Excitation Phase Modulation

Stockman M.I., Faleev S.V., Bergman D.J., Georgia State University, US

We predict and quantitatively evaluate the unique possibility of concentrating the energy of an ultrafast excitation of a nanosystem in a small part of the whole system by means of coherent control (phase modulation of [...]

Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

Rábag F., Mandelis A., Salnik A., University of Toronto, CA

B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]

The Numerical Simulation of a Substractive Process for the Fabrication of 3-D Low Temperature Co-Fired Ceramics Packaging Structures and Devices: Jet Vapor Etching

Ramos I., García L., Furlan R., Santiago-Aviles J.J., Pereira M.T., University of Puerto Rico at Humacao, US

We applied numerical simulation in order to gain knowledge and insight into the physical processes associated with Jet Vapor Etching, a subtractive process used in the machining of Low Temperature Co-Fired Ceramic (LTCC) tapes. Also, [...]

Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

Puchner H., Eib N., Kimball J., Mirabedini M., Haywood J., Aronowitz S., Cypress Semiconductor, US

In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was [...]

Rule Based Validation of Processing Sequences

Hansen U., Germer C., Büttgenbach S., Franke H-J, TU Braunschweig, DE

In conventional mechanical engineering the development of a product is influenced only little by the specific requirements of the fabrication processes. When looking at the domain of micro mechanical devices this circumstance is no longer [...]

Gas Flow Simulation in a PECVD Reactor

da Silva A.N.R., Morimoto N.I., LSI – EPUSP, BR

In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]

Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling

Hiwatari Y., Kaneko Y., Ohara K., Murakami T., Kanazawa University, JP

In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method

Wheeler D., Josell D., Moffat T.P., NIST, US

Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]