Photonic Materials & Devices – Page 8

Mid-IR integrated nanophotonics for chip-scale quantum optics applications

Buchwald W., University of Massachusetts Boston, US

A mid-IR nanophotonic architecture based on inter-sub-band transitions, along with experimental verification of the use of surface depletion as a means to control the host materials absorption properties is presented. Finite element simulations suggest this [...]

Doping-less Bipolar Transistor with fT Surpassing that of Conventional BJT

Nadda K., Jagadesh Kumar M., Indian Institute of Technology Delhi, IN

An innovative ultrathin SOI based bipolar charge plasma transistor BCPT for RF circuit applications is presented in this paper. The proposed device structure exhibits high cut-off frequency and an improved current drive while still maintaining [...]

Performance Comparison of Non-planar MOSFETs

Liao Y.-B., Chiang M-H, Hsu W.-C., National Ilan University, TW

To gain insights into device variability, device scalability and even circuit performance, more comprehensive simulation data are presented. FinFET shows the highest transconductances corresponding to aforementioned highest IDLIN and IDSAT. Regarding process variation, same W¬Si/D [...]

Report on the Atomically Precise, No Interface, Device Regime Workshop

Randall J.N., Ballard J.B., Owen J.H.G., Manning S.D., Zyvex Labs, US

The paper will present the findings of a workshop held in June 2012 at NIST to explore a new device regime with no materials interfaces and atomically precise placement of dopant atoms. The participants concluded [...]

Detection of diffused III-V materials in high-k oxides during atomic layer deposition and annealing

Cabrera W., Dong H., Brennan B., O’Connor É., Carolan P., Galatage R., Monaghan S., Povey I., Hurley P.K., Hinkle C.L., Chabal Y., Wallace R.M., University of Texas at Dallas, US

In this study we look at the impact of ALD HfO2 and Al2O3 on both InGaAs and InP substrates, with the aim of determining if there is any diffusion of substrate atoms into the high-k [...]

Nano Electronics & Photonic Materials & Devices

MIM Capacitors with stacked dielectrics

Gopalakrishnan H., Kailath B.J., Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, IN

In this work, the characteristics of MIM capacitors with stacked dielectrics are being compared with that with single dielectrics. (100) p-type silicon wafers with resistivity in the range 0.1-0.2 Ωcm have been used as substrate. [...]

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles

Stuchinsky V.A., Kamaev G.N., Efremov M.D., Arzhannikova S.A., Institute of Semiconductor Physics, RU

A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.

Dynamical Tunneling in the Systems of Double Quantum Dots and Rings

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We are modeling the InAs double QDs and QRs, embedded into the GaAs substrate. For the numerical modeling we apply an effective approach] in which the combined effect of strain, piezoelectricity and interband interactions are [...]

Synthesis of ZnO Nanosheets by Exposing Zn Film to Oxygen Plasma at Low Temperatures

Yoon J-H, Kangwon National University, KR

We report that the well-defined ZnO nanosheets can be synthesized by directly exposing Zn film to oxygen plasma produced by PECVD method using N2O gas at temperatures below 350 oC. FESEM, XRD, TEM, and PL [...]