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HomeTopicsNanoelectronics

Topic: Nanoelectronics

TranSIESTA: A SPICE for Molecular Electronics

Stokbro K., Taylor J., Brandbyge M., Ordejon P., Technical University of Denmark, DK
With our newly developed method,TranSIESTA[1], it has become possible to model complex molecular electronics devices under operation conditions. In this presentation I will describe the basic principles behind the method and applications of the method [...]

Molecular Wires and Logic Circuits Integration in a Single Molecule?

Joachim C., CEMES-CNRS, FR
Hybrid Molecular electronics (one molecule per device) do not offer good perspectives of miniaturization on the long term. The full integration, at the nanoscale, of a calculator will demand all the power of the quantum [...]

Finite Size Effects In Ferroelectric Nanosystems: Absence of mode softening

Wolpert D., Cox W., Cerne J., Markelz A., Zhao T., Ramesh R., University at Buffalo, US
Ferroelectrics are currently used for DRAM capacitors, nonvolatile memory elements, (FRAM), and switching and routing elements in optical communications systems. Further miniaturization and large scale application of these systems is limited by apparent finite size [...]

An Organic Molecule – Fullerene Mixture for a High Efficiency Photovoltaic Device: Theoretical Study

Mizuseki H., Niimura K., Majumder C., Kawazoe Y., Tohoku University, JP
The current general trend in research and development of photovoltaic elements is aimed at producing lower cost devices. An encouraging breakthrough in the development of highly efficient materials has been achieved by mixing electron-donor type [...]

Atomic-control Placement of Individual P atoms in Si for the Fabrication of a Quantum Computer Qubit Array

Schofield S.R., Curson N.J., Simmons M.Y., Hallam T., Ruess F.J., Oberbeck L., Clark R.G., University of New South Wales, AU
The ability to control the location of individual dopant atoms within a semiconductor has enormous potential for the creation of atomic-scale electronic devices. One of the most ambitious proposals for such a device is the [...]

Zero Bias Anomalies in Electrochemically Fabricated Atomic-Scale Metal Junctions

Natelson D., Yu L.H., Rice University, US
Metallic nanojunctions (MNJ) are unique tools for examining electronic transport, correlations, quantum coherence, and disorder at the atomic scale. Extensive progress has been made in understanding clean MNJs fabricated in ultrahigh vacuum (UHV) by the [...]

Molecular Electronics

High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm

Murakawa M., Oda Y., Amakawa H., Baba S., Higuchi T., Nishi K., AIST, JP
In this paper, we show, for the first time, GA application to process model calibration. We propose a distributed GA based calibration technique combined with the traditional local optimization algorithm, which reduces time for calibration [...]

Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs

Nguyen C.D., Jungemann C., Neihues B., Meinerzhagen B., Sedlmeir J., Molzer W., ITEM-University of Bremen, DE
In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Loechelt G.H., Sellers J., Morgan J., Azam M., ON Semiconductor, US
The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]

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