Topic: Nanoelectronics
Clocked Quantum-dot Cellular Automata circuits
We present an experimental demonstration of novel Quantum-dot Cellular Automata (QCA) circuits utilizing clocked architecture -a QCA latch and a two-bit QCA shift register. Devices are fabricated using metal tunnel junction technology and operate at [...]
Logic Optimization and Technology Mapping for CAEN
This paper considers the architectures and design issues involved in creating a nano-electronic computing system. We focus on the problems of technology dependent optimization and technology mapping for Chemically Assembled Electronic Nanotechnology (CAEN). We present [...]
Background Charge Insensitive Single-Electron Memory Devices
In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the [...]
Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures
Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to [...]
Merging Atomistic and Continuum Simulations of Silicon Technology – The Best from the Two Worlds
Simulation of diffusion processes during front-end silicon process stepes needs to address a variety of highly complicated phenomena. In industrial environments, such simulations are nearly entirely based on continuum approaches. The physics entering into the [...]
Study of Alloy Disorder in Quantum Dots through Multi-million Atom Simulations
A tight binding model which includes s, p, d and s* orbitals is used to examine the electronic structures of an ensemble of dome-shaped In0.6Ga0.4As quantum dots. Given ensembles of identically sized quantum dots, variations [...]
Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs
We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and [...]
Process Modeling Based on Atomistic Understanding for State of the Art CMOS Device Design
Chakravarthi S., Diebel M., Chidambaram P.R., Ekbote S., Dunham S.T., Machala C.F., Johnson S., Texas Instruments, US
Atomistic modeling methods are emerging as a powerful tool to understand the physical behavior of complex systems. However, continuum process simulators are the core of state of the art TCAD simulators and substantial challenges must [...]