In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the all-metallic FG memory devices fabricated using aluminum tunnel junction technology  with variable barrier separating FG and its control gate (CG). We report the operation of SEMC in one electron mode.Experimental results are compared with calculations and a very good match is observed. We discuss several regimes of SEMC operation and various methods to improve the performance of this type of memory.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 141 - 144
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics