Nanoelectronics – Page 67 – TechConnect Briefs

Fault Detection and Diagnosis Techniques for Molecular Computing

Tahoori M.B., Mitra S., Northeastern University, US

Fault detection and diagnosis techniques that are essential for defect tolerance, fault tolerance and self-repair of molecular computing systems are discussed. These techniques enable robust molecular computing system design protected from manufacturing defects and run-time [...]

Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due [...]

Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

Lassen B., Lew Yan Voon L.C., Melnik R., Willatzen M., Worcester Polytechnic Institute, US

Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.

Discontinuous Gold Films for Nanocell Memories

Nackashi D.P., Di Spigna N.H., Winick D.A., Amsinck C.J., Cheng L., Tour J.M., Franzon P.D., North Carolina State University, US

An important component to the nanocell, among other self-assembled networks, is the fabrication of a framework by which molecular elements can be interconnected. This framework must be nanometric in scale, created in a material suitable [...]

A Sub-40nm Nanostructured La0.7Sr0.3MnO3 Planar Magnetic Memory

Arnal T., Bibes M., Lecoeur Ph., Mercey B., Prellier W., Haghiri-Gosnet A.M., Institut d'Electronique Fondamentale IEF/UMR8622, FR

A single-step nanolithography planar process, which allows generating the core-element of a spin-polarized magnetic memory in the fully spin-polarized La0.7Sr0.3MnO3 (LSMO) manganite, is reported. Taking benefit of the proximity effects due to backscattered electrons, a [...]

Modeling of Nanoelectronic and Quantum Devices

Ferry D.K., Akis R., Gilbert M.J., Speyer G., Arizona State University, US

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have [...]

Nanoscale Electronics and Quantum Devices

Scalability and High Frequency Extensions of the Vector Potential Equivalent Circuit (VPEC)

Mukherjee B., Wang L., Wang P., Wang L., Wang P., Pacelli A., Stony Brook University, US

We present a complete modeling technique for inductive parasitics, based on the vector potential equivalent circuit (VPEC) topology. Novel algorithms for layout extraction and sparsification are introduced. Examples are discussed in terms of CPU time, [...]

Pareto-Optimal Modeling for Efficient PLL Optimization

Tiwary S.K., Velu S., Rutenbar R.A., Mukherjee T., Carnegie Mellon University, US

Simulation-based synthesis tools for analog circuits [1,2] face a problem extending their sizing/biasing methodology to larger block-level designs such as phase lock loops or converters: the time to fully evaluate (i.e., to fully simulate) each [...]

Simplified Half-Flash CMOS Analog-to-Digital Conveter

Tan P.B.Y., Kordesch A.V., Sidek O., Silterra Malaysia, MY

In this paper, we present a simplified method to construct a half-flash analog-to-digital converter (ADC) to achieve less die area consumption compared to the conventional half-flash ADC. Although the die area consumption is reduced but [...]