Nanoelectronics – Page 5 – TechConnect Briefs

Surface Potential Based Compact I-V Model for GaN HEMT Devices

Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

Electronics & Microsystems

Self-assembly via a quantum control tracking system

Kohn W., Zabinsky Z., Nerode A., Veritone, US

A nano-manufacturing facility requires high levels of precision due to the strong quantum effects for devices at a 2 to 4 nanometer footprint. We develop a feedback process control to realize a 3-D scaffolding approach. [...]

European Activity for Smart Power Electronics and Power Discretes – The R3-PowerUP EU Project

Bieniek T., Janczyk G., Instytut Technologii Elektronowej, PL

Smart power ICs are key enabling components for various applications from mid-power automotive, to industrial power, battery management systems electric vehicles, domotics, indoor and outdoor lighting, computers and industrial peripherals. Power electronics serves over 30% [...]

The Multifunctional 3D Interposer Platform for HPC – Development, Measurements, Design Guidelines

Janczyk G., Bieniek T., Instytut Technologii Elektronowej, PL

This paper presents dedicated solutions developed in frame of the EU FP7 CarrICool project focused on the modular interposer system architecture providing scalable heat removal, local power delivery and optical signaling issues critical for high [...]

A molecular dynamics study of the causes of defects at dielectric/substrate interface of Ge MOSFETs

Heydari A., Sheikholeslam S.A., Grecu C., Ivanov A., University of British Columbia, CA

The superior electrical properties of Germanium (Ge), such as higher electron and hole mobility, compared to that of other semiconductor materials, have been one of the factors to cause germanium to return to be of [...]

Development of “fullerene composite paper” for aiming to fabricate electronic paper devices

Onishi T., Oya T., Yokohama National University, JP

We propose a new functional paper containing fullerenes, i.e., a “fullerene-composite paper.” Generally, a fullerene, C60, has the form of a hollow sphere by carbon. It is known that the fullerenes have high physical and [...]

Development of “paper transistors” with new structure using carbon-nanotube-composite papers for aiming to construct logic circuits

Iijima R., Oya T., Yokohama National University, JP

We propose new “paper transistors” with unique structure using carbon-nanotube (CNT)-composite papers for aiming to construct “paper logic circuits.” Recently, the CNT that is one of nano-carbon materials has been receiving increasing attention because it [...]

Discovering of Collagen-1’s Role in Producing Superconducting Current in Nanobiomimetic Superlattice Structured Organometallic Devices at Room Temperature Enabled Direct Quantitation of Sub pg/mL Collagen-1 by a Voltage and a Cyclic Voltammetry Method

Chen E.T., Thornton J.T., Kissinger P.T., Duh S-H, Advanced Biomimetic Sensors, Inc., US

Cooper pair electrons producing superconducting current in near zero Kelvin temperature at the Josephson-junction in the superconductors show its potential utilities. Could also a superconducting current produced by a superlattice organometallic device enable direct detection [...]