Nanoelectronics – Page 14 – TechConnect Briefs

Nanomanipulators with reduced hysteresis and interferometers build in NanoFabs

Luskinovich P.N., Zhabotinskiy V.A., NANOMETER Standard GmbH, DE

The use of nanomanipulators made on the base of monocrystals characterized inverse piezoelectric effect and many times, in comparison with piezoceramic, less hysteresis and creep, allows to achieve the following results: - Shorten the time [...]

NanoFab: Manufacturing & Instrumentation

Fluorescent Microspheres as Tags for Anti-Counterfeiting of Textiles

Ivanova O.S., Campbell T.A., Virginia Tech, US

The goal of this project is to create an anti-counterfeiting system for textiles that takes advantage of advanced materials and mobile readers. Current anti-counterfeiting systems are challenged in achieving the desired characteristics of lack of [...]

Transient and steady-state dark current in amorphous selenium avalanche radiation detectors

Kabir M.Z., Imam S.-A., Concordia University, CA

Amorphous selenium (a-Se) is currently the only commercially viable X-ray photoconductor in direct conversion detectors. However, the a-Se detector is not perfect and it has low conversion gain (X-ray to free electron-hole pair, EHP, generation) [...]

Plasmonic Enhanced Chiral Metamaterials

Alali F., Kim Y.H., Furlani E.P., University at Buffalo, US

Metamaterials are artificial materials that are engineered to produce various interesting phenomena such as negative refractivity and sub-diffraction-limit imaging. The majority of metamaterials for THz applications have been fabricated using “top-down” techniques. These methods tend [...]

Photoconductivity of GaN Nanowires

Teker K., Siemann A., Istanbul Sehir University, TR

Gallium nitride nanostructures continue to attract great interest due to their applications in optoelectronic devices (UV photodetectors, and light-emitting devices), high-power/high temperature electronics, nanosensing, and piezoelectric nanogenerators. This paper presents a systematic photoconductivity investigation of [...]

Plasmonic nanophotonics and its applications

Chen K.R., Hong J.S., Goncharenko A.V., National Cheng Kung University, TW

Study of surface plasmnon polariton (SPP) effect is a fundamental scientific cross-disciplinary research area with academic importance and critical application potential. We discuss methods for the manipulation of light and plasmonic properties with nanostructures. With [...]

Mid-infrared Silicon Microphotonic Cavities with High Resonance of Q~10^5

Lin P-T, Singh V., Cai Y., Patel N.S., Kimerling L., Agarwal A.M., Massachusetts Institute of Technology, US

One dimensional photonic crystal 1D-PhC silicon waveguide resonators with quality factor, Q~10^5, are demonstrated at mid-infrared wavelengths between 2 um to 5 um. Silicon has several advantages for mid-infrared applications including its broad mid-infrared transmission [...]

Active Pixel CMOS Image Sensor with Single Transistor Architecture

Liang H., Zhang A., Zhang D., Zhang G., Zhang A., Zhang D., Zhang G., He J., Su Y., Zhang A., Zhang D., Zhang G., PKU-HKUST Shenzhen-Hongkong Institution, CN

CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved [...]

Mid-infrared Silicon Platform for Chip-scale Chemical Sensors

Lin H.-Y.G., Lin P-T, Lin H.-Y.G., Lin P-T, Singh V., Patel N.S., Hu J., Richardson K., Luzinov I., Hensley J., Kimerling L., Murthy Agarwal A., Massachusetts Institute of Technology, US

Mid-Infrared optofluidics based silicon sensor platforms are demonstrated. Silicon is a great candidate for mid-infrared optofluidics for the following reasons: (1) Silicon has a broad transmission window up to 7 um (2) Silicon offers CMOS [...]