Informatics, Modeling & Simulation – Page 7

Simulation of High-k Passivation-Layer Effects on Breakdown Voltage in AlGaN/GaN HEMTs

Hanawa H., Satoh Y., Horio K., Shibaura Institute of Technology, JP

A two-dimensional analysis of breakdown characteristics in AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off-state breakdown voltage on the [...]

Time-Domain Monte-Carlo and Noise Analysis of MAPS Sensors

Jankowski M., Napieralski A., Lodz University of Technology, PL

A non-typical approach to extended simulational analysis for monolithic active pixel (MAPS) based binary pixel readout circuits is presented. Circuit solutions and simulation results are presented and discussed. Applications of particle detection/tracking are quite wide, [...]

High-voltage Edge-rounded Adjustable Trapezoidal Waveform Generators

Jankowski M., Napieralski A., Lodz University of Technology, PL

An approach to design low-voltage and high-voltage trapezoidal waveform generators with edge-rounding ability is described. The paper presents circuits able to produce edge-rounded trapezoidal waveforms, endowed with several means of waveform parameter adjustments. Signal paths [...]

Threshold Voltage Model of Hetero Gate Dielectric-Dual Material Gate-GAA-Tunnel FET

Madan J., Gupta R.S., Chaujar R., Delhi Technological University, IN

In this paper, a hetero gate dielectric, dual material gate, gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been proposed. An analytical model for the same has been developed to examine the band to [...]

The Heat transfer in Fin-FET transistor

Zubert M., Janicki M., Raszkowski T., Samson A., Napieralski A., Lodz University of Technology, PL

The electro-thermal analysis is one of the most important development steps in the professional design of analogue submicron electric ICs, power modules design process as well as modern nanostructures. This analysis is useful to power [...]

Modeling the effect of the increase in the actuation voltage on the dynamic behavior of a RF MEMS switch

Jamshidzadeh M., Casals J., Assistant Professor, IR

Abstract—In the past few years many reports have demonstrated the development of RF-MEMS switches considering the mechanical, electrical and chemical behaviors separately. However there are a few works which address the whole aspects of RF-MEMS [...]

Novel Nanoeletromechanical Switches for VLSI Power Integrity Improvement

Zhang R., Saab D., Masoo M., Case Western Reserve University, US

Complementary Metal Oxide Semiconductor(CMOS)is facing extreme difficulties to realize energy efficient designs while the scaling of channel length has been being at the same pace in the past several decades.In this paper,we presented a novel [...]

Application of Dual-Phase-Lag Model for Thermal Analyses of Electronic Nanostructures

Janicki M., Zubert M., Samson A., Napieralski A., Lodz University of Technology, PL

This paper presents the Dual-Phase-Lag (DPL) equation as a possible candidate to model heat transfer processes in electronic nanostructures. The analyses presented in this paper are carried out for a thin one-dimensional slab heated on [...]

Modeling & Simulation of Microsystems

Model Study for Thermal Deformation and Creep Behavior of Polymers Considering Moisture Diffusion

An T.G., Lim Y., Kim N., Sogang University, KR

ABS(Acrylonitrile-Butadiene-Styrene) polymer is viscoelastic materials which are subject to permanent deformation when exposed to certain temperatures and humidity levels for long periods of time. In this paper, this phenomenon was defined as a creep phenomenon [...]