Informatics, Modeling & Simulation – Page 20

Silicon Crystal Effects in Modeling of MEMS Silicon Resonators

Ghaffari S., Ahn C.H., Ng E.J., Kenny T.W., Stanford University, US

Silicon has found considerable application in precision MEMS devices because it provides desirable high frequency and quality factor characteristics. Usually, MEMS resonators are built from single crystal silicon with proven long-term stability. It is experimentally [...]

Electromechanical response of high frequency silicon nanowire resonators:simulation and measurements

Koumela A., Mercier D., Marcoux C., Purcell S.T., Hentz S., Duraffourg L., CEA-LETI, FR

Electromechanical models of nano-electromechanical devices are usually implemented with specifically developed mathematical software and these models are not easily compatible with circuit simulation software. However, in order to use a nano-device as a sensor, a [...]

Electric Double Layer Simulation on Transient State for Sensitivity Enhancement of Affinity-Based Biosensor

Woo J-M, Kim S-H, Park Y.J., Seoul National University, KR

We have presented a numerical simulation for the affinity-based electrical biosensor system on the steady and transient state. Considering the screening length in the solutions, the solution with low ion concentration can be better measurement [...]

Simulation of Removal of Surface-State-Related Lag and Current Slump in GaAs FETs

Hafiz H., Kumeno M., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to [...]

Novel Structure of CMOS Voltage-to-Current Converter for High-Voltage Applications

Jankowski M., Napieralski A., Technical University of Lodz, PL

The research presented in this paper is focused on combining voltage-based and current-based modes of high-voltage analog signal processing. The research originated from necessity of interfacing a large current-mode processing module inside voltage-mode integrated circuit. [...]

Gas Sensor with SAW Structures

Laposa A., Husak M., Kroutil J., Czech Technical University in Prague, Faculty of Electrical Engineering, CZ

The objective of this paper is presents the modeling and simulation of SAW (Surface Acoustic Wave) gas sensors based on one-port and two-port interdigitated metal structures. These sensors can be used for identifying environmental contaminants [...]

Linearity evaluation of Silicon Nanowire Surrounding Gate MOSFET for high performance ULSI applications

Aggarwal N., Sikka K., Gupta I., Chaujar R., Delhi Technological University, IN

The inspiration of this work is that the search for high performance ICs has led to scaling of MOSFETs down to sub-50nm regime and thus Silicon Nanowire (SNW) MOSFETs offer a promising solution for realizing [...]

High-Voltage High Input Impedance Unity-Gain Voltage Buffer

Jankowski M., Napieralski A., Technical University of Lodz, PL

The research presented in this paper is targeted to devise possibly non-complex high-voltage unity-gain buffer well suited for connecting to outputs of current-mode stages. The circuit idea originated from need of buffering a high-voltage current-mode [...]

Design of ASIC Dedicated to Thermal Analysis of Many-Core Architectures

Szermer M., Kotynia L., Pietrzak P., Janicki M., Napieralski A., Technical University of Lodz, PL

The main goal of the paper is to present the design of an ASIC dedicated to thermal analysis of many-core architectures. Due to the fact that the process of designing real multi-core microprocessors is expensive [...]

Finite Element Modeling and Simulation of Piezoelectric Energy Harvesters Fabricated in CMOS Technology

Mok A., Tigli O., University of Miami, US

Here we present a micron scale piezoelectric energy harvester fabricated in a commercial Complementary Metal Oxide Semiconductor (CMOS) technology. It is a trilayer cantilever model clamped on one end. The dimensions of this cantilever are [...]