Sensors, MEMS, Electronics – Page 303

Electronic Nanotechnology Based on Non-Binary Principles

Mathew J., Dubrova E., Tenhunen H., Royal Institute of Technology, Stockholm, SE

This paper describes alternative to binary number representations and discuss possibilities for implementing multiple-valued functions using chemically assembled electronic nanotechnology. The implementation of a four-valued adder using molecular diodes is presented. The proposed structure is [...]

A Physical Compact MOSFET Mobility Model Including Accurate Calculation of Saturation Surface Potential

Benson J., D’Halleweyn N.V., Mistry K., Redman-White W., University of Southampton, UK

This paper describes a MOSFET vertical mobility model that has been implemented in a surface potential based compact model [1]. The main scattering mechanisms (surface roughness, phonon, and Coulomb) are accounted for using an expression [...]

Circuits

Theory of Spin Transport in an n-typed GaAs Quantum Well

Wu M.W., Weng M.Q., Univ. of Science & Technology of China, CN

We perform a many-body investigation of the spin diffusion/transport in an n-doped GaAs QW based on a set of many-body kinetic transport equations. These equations are derived for the spatial inhomogeneous system by using nonequilibrium [...]

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Ahmed S.S., Vasileska D., Arizona State University, US

We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in [...]

Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device

Abebe H., Cumberbatch E., MOSIS, US

A 1-dimensional analytic quantum mechanical effects correction formula for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (DG) model using matched asymptotic expansion techniques. The primary theoretical framework for this [...]

Quantum and Kinetic Simulation Tools for Nano-scale Electronic Devices

Fedoseyev A., Kolobov V., Arslanbekov R., Przekwas A., Balandin A., CFD Research Corporation, US

The progress in LSI technologies has resulted in scaling down semiconductor devices to nano-scale dimensions where kinetic and quantum effects in the carrier transport become crucial for the device performance. The transistor counts on the [...]

A Quantum Waveguide Array Generator For Performing Fourier Transforms

Akis R., Ferry D.K., Arizona State University, US

Recently, quantum computing has gained attention as a possible means of greatly increasing the speed of certain calculations when compared with traditional, binary computing. A key part of many quantum computing algorithms is the performance [...]

Electronic Properties and Transport in Silicon Nanowires

Batra I.P., Ciani T., Boddupalli D., Soberano L., University of Illinois at Chicago, US

In an integrated silicon nanotechnology environment, it may be desirable to replace metallic inter-connects like Al, with Silicon metallic wires. This motivated us to investigate the electronic and transport properties of quasi one-dimensional (1D) Silicon [...]

Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

Watling J.R., Asenov A., Brown A.R., Svizhenko A., Anantram M.P., University of Glasgow, UK

We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain [...]