Advanced Materials & Manufacturing – Page 644

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK

As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

Quantum Effects, Quantum Devices and Spintronics

Coarse-Grained Molecular Dynamics and Multiscale Modeling of NEMS Resonators

Rudd R.E., Lawrence Livermore National Laboratory, US

We review concurrent multiscale simulations of dynamic and temperature-dependent processes found in nanomechanical systems coupled to larger scale surroundings. We focus on the behavior of sub-micron Micro-Electro-Mechanical Systems (MEMS), especially microresonators. These systems are often [...]

Kinetic Monte Carol Simulations of Protein Folding and Unfolding

Makarov D.E., Metiu H., U.C. Santa Barbara, US

We report here kinetic Monte Carlo (KMC) studies of two problems: (1) Unfolding of the protein titin under mechanical tension and (2) The formation of native contacts in the process of folding of small, single [...]

Monte Carlo Modeling of Thin Film Deposition: Factors that influence 3D islands

Gilmer G., Dalla Torre J., Baumann F.H., Lawrence Livermore National Laboratory, US

In this paper we discuss the use of atomistic Monte Carlo simulations to predict fim microstructure evolution. We discuss physical vapor deposition, and are primarily concerned with films that are formed by the nucleation and [...]