Sector: Advanced Materials & Manufacturing
MIM Capacitors with stacked dielectrics
Gopalakrishnan H., Kailath B.J., Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, IN
In this work, the characteristics of MIM capacitors with stacked dielectrics are being compared with that with single dielectrics. (100) p-type silicon wafers with resistivity in the range 0.1-0.2 Ωcm have been used as substrate. [...]
A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles
Stuchinsky V.A., Kamaev G.N., Efremov M.D., Arzhannikova S.A., Institute of Semiconductor Physics, RU
A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.
Dynamical Tunneling in the Systems of Double Quantum Dots and Rings
We are modeling the InAs double QDs and QRs, embedded into the GaAs substrate. For the numerical modeling we apply an effective approach] in which the combined effect of strain, piezoelectricity and interband interactions are [...]
Synthesis of ZnO Nanosheets by Exposing Zn Film to Oxygen Plasma at Low Temperatures
We report that the well-defined ZnO nanosheets can be synthesized by directly exposing Zn film to oxygen plasma produced by PECVD method using N2O gas at temperatures below 350 oC. FESEM, XRD, TEM, and PL [...]
Fabrication and Characterization of of Nanoscale Tellurium Fuses for Long Term Solid State Data Storage
We have fabricated nanoscale tellurium fuses using electron beam lithography for long term data storage applications. The tellurium fuses contain a narrow resistive region(250 nm to 10 micron). Application of a sufficiently high voltage accross [...]
Suppression of Variability in Metal Source/Drain SOI MOSFET with Partial Buried Oxide and δ-doping
Recently, metal source/drain (S/D) dopant-segregated Schottky barrier (DSSB) SOI MOSFET has attracted the attention of researchers due to its planar structure, CMOS compatibility and reduced S/D series resistance at thin SOI film. However, employing dopant-segregation [...]
The concept of a superconductor of man-made 1D superlattice
It is well-known that man-made 1D superlattice structure (for instance, GaAs-Ga1-xAlxAs prepared with alternating epitaxy) exhibits a resonant tunneling phenomenon. The mean free path of an electron is, however limited to the order of 100 [...]
Investigation of Frequency Dependent Noise Performance Metrices for Gate Electrode Work function Engineered Recessed Channel MOSFET
As MOSFET device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This paper predicts the feasibility of a novel design i.e., Gate Electrode Work function Engineered Recessed [...]
Understanding Charge Dynamics in Silicon Dangling Bond Structures for Nanoscale Devices
A dangling bond (DB) on a silicon surface atomic has been found to behave as an atomic-scale quantum dot [1-4]. This opens up the possibility of using DBs as building blocks for novel electronic structures, [...]