Chiah S.B., Zhou X., Lim K.Y.
Nanyang Technological University, SG
Keywords: short-/narrow-channel effects, threshold voltage
The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) and inverse narrow-width effect (INWE). This has been achieved based on the ideas of the previous length-dependent Vt(L) model, which allows the unified Vt model to be extended to both length and width dimensions at various bias conditions.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 338 - 341
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-1-7