Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C.
University of California at Berkeley, US
Keywords: compact modeling, MOSFET's, small dimensional effects, surfacepotential-plus model
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 70 - 73
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-8-4