Papers – Page 1039 – TechConnect Briefs

Complex Potentials, Dissipative Processes and General Quantum Transport

Ferry D.K., Barker J.R., Akis R., Arizona StateUniversity, US

Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]

Ab-Initio TCAD Models of Dopant Diffusion in Silicon

Nelson J.S., Wright A.F., Schultz P.A., Sandia National Laboratory, US

The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]

Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation

Hössinger A., Selberherr S., TU Vienna, AT

We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity profiles can be calculated as well [...]

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon

Son M-S., Hwang H-J., Chung-Ang University, KR

In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. [...]

Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes

Dunham S.T., Boston University, US

In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large [...]

CAD Analyses of PCR Well Containment

Deshpande M., Greiner K.B., Romanowicz B.F., Gilbert J.R., Microcosm Technologies, Inc., US

Design analysis of PCR (Polymerase Chain Reaction) microwells are conducted to observe the contamination between neighboring wells on a PCR chip during the reaction. Thermal effects are incorporated to represent the temperature cycling characteristic of [...]

Web-Based Design Tools for MEMS-Process Configuration

Hahn K., Brück R., University of Siegen, DE

The micro electromechanical systems (MEMS) industry is characterized by small and medium sized enterprises (SMEs) specialized on products to solve problems in specific domains like medicine, automotive sensor technology, etc. In this field of business [...]

SUNRED: A Field Solver and Compact Model Generator Tool Based on Successive Node Reduction

Székely V., Páhi A., Rosenthal M., Rencz M., Techical Unviersity of Budapest, HU

The paper presents the new features of the SUNRED field solver program: the visualization of the structures in the 3D version, and the new dynamic simulation methods. Comparisons with other field solvers demonstrate the superior [...]

Modeling of Stress Induced Hysteresis in Piezo-Resistive Analysis

Lien H-P, ISE, CH

The impact of mechanical stress on electrical characterizations of microelectronic circuitry is a major design issue in development of sensors and integrated micro-electro-mechanical systems. Because the electrical properties of semiconductors are in uenced by external [...]