Papers – Page 1028 – TechConnect Briefs

Numerical Simulation of Periodical Distribution of Antisite Defects in Irradiated Semiconductors

Mykhaylovskyy V.V., Russell K.C., Sugakov V.I., Academy of Science of Ukraine, UA

A simulation of radiation-induced instability in binary semiconductors, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can [...]

Monte Carlo Simulation Study of Mechanical Properties of Au Nanowires

Tanimori S., Shimamura S., Yamaguchi University, JP

We have carried out Monte Carlo simulations of elongation and shear of Au nanowires to investigate their mechanical properties. We have followed stable atomic arrangements in the nanowires during deformation. The Morse potential has been [...]

Simulations for Optimized Piezoresistors

Mladenovic D., Vasileska D., Motorola, US

As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused [...]

Heterogeneous Thin Films of Martensitic Materials with Application to Large Strain Microactuators

Shu Y.C., California Institute of Technology, US

We propose a multiscale modeling to study the effective behavior of a heterogeneous thin film accounting in detail for the underlying microstructure, grain sizes and the film thickness. Motivated by the recent study of shape-memory [...]

Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation

Karouri F.S., Karoui A., Rozgonyi G.A., North Carolina State University, US

The oxygen precipitation in high purity CZ-silicon for ULSI is investigated with regard to the LO-HI and HI-LO-HI annealing processes used for denuded zone formation. The precipitation can be treated as a stochastic phenomenon and [...]

Simulation of Porous Si and SiOx Layer Growth

Burlakov V.M., Sutton A.P., Briggs G.A.D., Tsukahara Y., University of Oxford, UK

Monte Carlo simulation of deposition of amorphous SiOx layer on a polymer surface is reported. The model developed is based on the network properties of silica and takes into account dangling bonds arising during the [...]

Ab initio Molecular Dynamics Simulations of Aluminum Ion Solvation in Water Clusters

Lubin M.I., Bylaska E.J., Weare J.H., University of California, US

The results of ab initio molecular dynamics simulations of the solvation of Al3+ and its hdrolyzation products in water clusters are reported. Al3+ ions in water clusters (6<n<16) form a stable hexa-hydrate Al(H20)3+6 complex in [...]

Computer Simulation from Electron Beam Lithography to Optical Lithography

Cui Z., Rutherford Appleton Laboratory, UK

Simulation of electron beam lithography and optical lithography has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulation which was based on ideal [...]

Self-Adapting Vertices for Mask-Layout Synthesis

Lee C.-Y., Antonsson E.K., California Institute of Technology, US

An efficient procedure for synthesizing MEMS mask-layouts for a desired 3-D shape is discussed. This method can greatly reduce the number of design and prototype iterations required to produce a desired device. The method is [...]

Modeling of Focused Ion Beam Trimming of Cantilever Beams

Lam T., Darling R.B., Univeristy of Washington, US

A finite element model of the cantilever beam is implemented to include a non-uniform thickness along its length, due to focused ion beam trimming. A quasi-static, iterative approach is used to calculate the cantilever profile [...]