Papers – Page 1023 – TechConnect Briefs

Modeling of On-Chip Simultaneous Swithcing Noise in VDSM CMOS Circuits

Tang K.T., Friedman E.G., University of Rochester, US

On-chip simultaneous switching noise (SSN) has become an important issue in the design of power distribution networks in current VLSI/ULSI circuits. An analytical expression characterizing the simultaneous switching noise voltage is presented here based on [...]

A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs – Modeling and Measurements

Rao R.V.V.V.J., Joe J., Chia Y.W.M., Ang K.S., Wang H., Ng G.I., National University of Singapore, SG

A simple and accurate method for extracting small-signal signal equivalent circuit for double heterojunction d-doped PHEMTs was developed. The circuit elements were extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were [...]

Verilog-AMS Eases Mixed Mode Signal Simulation

Miller I., Cassagnes T., Motorola ESD Europe, US

The ability to design and verify mixed mode (digital, analog, electrical, and non-electrical) systems is key to the development of new products for the ever expanding electromechanical market. Although there are several individual point tools [...]

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US

Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]

3D Thermo-Electro-Mechanical Simulations of Gas Sensors Based on SOI Membranes

Lu C-C., Setiadi D., Udrea F., Milne W.I., Covington J.A., Gardner J.W., Cambridge University, UK

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2ñbased multilayer membrane has been performed to ensure a high [...]

Triboelectromagnetic Phenomena at a Simulated Material Combination of a Head/Magnetic-Recording-Disk

Nakayama K., Mechanical Engineering Laboratory, JP

The head slider of a magnetic recording apparatus is currently covered with a diamond like carbon (DLC) film, while the magnetic recording layer of the disk is overcoated with hydrogenated carbon film (HCF). The head [...]

Automatic Differentiation Technique in Device Model Parameter Extraction

Cheng B., Shao Z., Wang L., Tang T., Yu Z., Xi'an Jiaotong University, CN

Automatic Differentiation (AD), based on the nonstandard analysis theory, is a new technique in computer numerical analysis. An AD based algorithm for device model parameter extraction is presented. Using this algorithm, the constrained parameter extraction [...]

Resonant-Type Micro-Probe for Vertical Profiler

Lebrasseaur E., Bourouina T., Pourcie J-B., Ozaki M., Masuzawa T., Fujita H., LIMMS/CNRS-IIS, JP

We present a characterization method, which is dedicated to the measurement of the inner dimensions of high aspect ratio micro-holes, typically 100mm in diameter and 1mm in depth. Micro-probes with an integrated force-sensitive element are [...]

Analysis of an Electrostatic Microactuator with the Help of Matlab/Simulink: Transient and Frequency Characteristics

, ELMI, FR

The article is focused on the development of a numeric simulator dedicated to the electrostatic microactuator. It's based on the use of Simulink (Matlab „). The electrostatic microactuator is regard as a model <> associated [...]

Calculation of the AC Electroquasistatic Sinusoidal Steady-State Coulomb Force on a Conductor Coated with a Lossy Dielectric

Osterberg P., Inan A., University of Portland, US

The ability to directly calculate the analytical closed-form electroquasistatic sinusoidal steady-state Coulomb force (or ac force) exerted on a conductor coated with a lossy dielectric in the presence of a second grounded conductor and excited [...]