Iizuka T., Fukushima K., Tanaka A., Ueno M., Miura-Mattausch M.
Hiroshima University, JP
Keywords: compact model, HV-MOSFETs, TCAD
A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared with planar HV-MOSFET. As for planar HV-MOSFETs, regardless of DDMOS or LDMOS, HiSIM_HV has begun to serve design community as a world recognized model. In this work, the benefit of HiSIM_HV was extended to another class of HV device, i.e., trench-gate type HV-MOSFET, while the framework of the HiSIM_HV model formulation was kept intact as much as possible. The modified code successfully match TCAD-generated measurement data.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 748 - 751
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2