He J., He X., He Y., Hu G., Li C., Liu J., He J., He X., He Y., Liu J., Ma G., He J., He X., He Y., Pan J.
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Keywords: field-effect transistor, FinFET, hot carrier effect, integrated circuits, interfacial traps, oxide reliability, semiconductor devices, tunneling FET
Hot-carrier effect and oxide reliability of CMOS T-FinFET with 2.1nm-thick gate-SiO2 were investigated. It was found that hot-carrier immunity improves as the T-FinFET fin width (body thickness) decreases, which facilitates gate-length scaling, while it is degraded at elevated temperature due to the self-heating effect. High values of QBD are achieved for devices with very small gate area. A post-fin-etch hydrogen anneal is helpful for improving hot-carrier immunity and QBD.
Journal: TechConnect Briefs
Volume: 4, Informatics, Electronics and Microsystems: TechConnect Briefs 2018
Published: May 13, 2018
Pages: 173 - 176
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 978-0-9988782-1-8