Hot Carrier Effect and Oxide Reliability of T-FinFET Devices
He J., He X., He Y., Hu G., Li C., Liu J., He J., He X., He Y., Liu J., Ma G., He J., He X., He Y., Pan J., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Hot-carrier effect and oxide reliability of CMOS T-FinFET with 2.1nm-thick gate-SiO2 were investigated. It was found that hot-carrier immunity improves as the T-FinFET fin width (body thickness) decreases, which facilitates gate-length scaling, while it is [...]