Miura-Mattausch M., Navarro D., Ueno H., Mattausch H.J., Miura-Mattausch M., Morikawa K., Itoh S., Kobayashi A., Masuda H.
Hiroshima University, JP
Keywords: charge-based modeling, MOSFET model, sub-100nm technology, surface potential
Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge induced by the high lateral electric field is demonstrated to become a major contributing factor in the charge distribution of small-size MOSFETs, instead of the conventional intrinsic part. This changes the charge partitioning of the inversion charge, which changes the high-frequency response of small-size MOSFETs as well.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 303 - 306
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 0-9767985-3-0