See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M.
Nanyang Technological University, SG
Keywords: compact modeling, effective drain-source voltage, Gummel symmetry, MOSFET
One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The proposed approach of formulating the effective drain-source voltage with built-in bulk-bias dependency is always symmetrical regardless of the value of the smoothing parameter. Together with other necessary and sufficient conditions to meet the model symmetry requirements, the proposed simple model has made a critical milestone contribution to resolving one of the key showstoppers in the current industry-standard MOS model, as well as for next generation model to trade off symmetry at higher-order derivatives and geometry-dependent effective drain–source voltage smoothing parameter.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 613 - 616
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4