Mohseni K., Shakouri A., Ram R.J.
California Institute of Technology, US
Keywords: electron transport, electron vortices, hydrodynamic model, scale analysis, semiconductors, submicron devices
The hydrodynamic model of electron transport in semiconductors is analyzed and in analogy to uid mechanics the transport equation for the electron vorticity, rv, is derived. Aside from the classical hydrodynamic sources of vorticity, collision terms in the continuity and momentum equations may also generate electron vorticity. A scale analysis of the electron vorticity equation is performed and the relative order of magnitude of each source of vorticity is found. These analysis predict conditions for the observation of electron vortices in semi- conductor devices.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 453 - 456
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems, Nanoelectronics
ISBN: 0-9666135-7-0