electron transport – TechConnect Briefs

Tailoring Molecular Devices for its Electronic Properties

Lamba V., Engles D., Pati S.K., Haryana College of Technology & Management, Kaithal, IN

In present work we studied Conduction properties of nanoscale contacts DFT/NEGF approach. Such calculations give insight into details behind the conductance that is not readily available in experiments. For example, we may learn how the [...]

First-principles Modeling of Magnetic Memory Components — Preliminary Results on the Effects of Interface Oxides

Stilling M., Stokbro K., Flensberg K., Atomistix, DK

Magnetotunnel junctions (MTJs), exhibiting high tunneling magnetoresistance (TMR), are currently being employed in new generations of hard disk drive (HDD) read heads and novel magnetic random access memory (MRAM) technology. We have modeled such spintronic [...]

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Zhang X., Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method [...]

Keywords: electron transport

Tailoring Molecular Devices for its Electronic Properties

First-principles Modeling of Magnetic Memory Components — Preliminary Results on the Effects of Interface Oxides

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Molecular Control of the Drain Current in a Buried Channel MOSFET

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Electron Vortices in Semiconductor Devices

High-Field and High-Temperature Transport in n-Type 3C-SiC