semiconductors – TechConnect Briefs

Arsenene Substrates Enable a New Era of High-Performance Semiconductors

Chicago Semiconductor achieved a breakthrough in fabricating two-dimensional layers of Arsenene and Silicene. This was realized for uniform deposition of Arsenic-on-Silicon(112) and Silicene on Silicon (112). The key to stable and uniform Arsenene-on-Silicon (AeOS) and [...]

Seeing the invisible – ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

Kolosov O.V., Dinelli F., Krier A., Henini M., Hayne M., Pinque P., Lancaster University, UK

Scanning probe microscopes (SPM’s) are indispensable in modern nanoscale science but ability of SPM’s to look below the surface is unavoidably limited. In spite of developments based on Ultrasonic Force Microscopy (UFM) a true subsurface [...]

Microwave-assisted synthesis of water soluble ZnSe@ZnS quantum dots

Bailon-Ruiz S.J., Perales-Perez O., Singh S.P., University Of Puerto Rico at Mayaguez, PR

Semiconductors nanocrystals known as quantum dots (QD’s) have attracted much attention because of their optical properties can be tuned just by controlling their crystal-size, composition and shape at the nanoscale. Compared to organic dyes, quantum [...]

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P., Groupe de Physique des Matériaux, FR

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

Modeling of Nanoelectronic and Quantum Devices

Ferry D.K., Akis R., Gilbert M.J., Speyer G., Arizona State University, US

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have [...]

Toward an Integrated Computational Environment for Multiscale Computational Design of Nanoscale Ion Channel Semiconductors

Natarajan S., Varma S., Tang Y., Parker S., Mashl J., Jakobsson E., NCSA, US

This paper describes the design and operation of an integrated multiscale computational environment for design of nanoscale ion channel semiconductors, the Ion Channel Workbench. The present work builds on an earlier multiscale calculation from our [...]

Low K Carbon Films Deposited in Low Frequency Discharge for Sub-micron Devices

Kosarev A., Torres A., Zuniga C., Institut National for Astrophysics, Optics and Electronics, MX

An interconnect delay begins to dominate total device delay time and consequently, operation rate at sub-micron (

A Systematic Search for New Scintillators using Electronic Structure Calculations

Klintenberg M., Derenzo S.E, Weber M.J., Lawrence Berkeley National Laboratory, US

A systematic study of several hundred inorganic crystal structures have been performed by means of electronic structure calculations with the goal of finding potential new scintillator materials for synthesis and testing. All X-ray or neutron [...]

Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

Rábag F., Mandelis A., Salnik A., University of Toronto, CA

B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]

A Systematic Search for New Scintillators using Electronic Structure Calculations

Klintenberg M., Derenzo S.E, Weber M.J., Lawrence Berkeley National Laboratory, US

A systematic study of several hundred inorganic crystal structures have been performed by means of electronic structure calculations with the goal of finding potential new scintillator materials for synthesis and testing. All X-ray or neutron [...]