Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment

Ionescu A.M., Mathieu N., Chovet A.
LPCS/ENSERG, FR

Keywords: analytical models, MAGFET, offset, sensitivity, silicon

In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of optimum operation criteria, in terms of offset reduction and/or sensitivity maximization.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 127 - 132
Industry sector: Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation, Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3