An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M.
Peking University, CN

Keywords: circuit simulation, compact modeling, device physics, non-classical MOSFETs

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus it is more suitable to implement SRG MOSFET model into the circuit simulators for circuit design and application.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 641 - 644
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4