unified regional modeling – TechConnect Briefs

A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs

Zhou X., Chiah S.B., Nanyang Technological University, SG

Compact modeling for doped-body MOSFETs, such as ultra-thin body (UTB) SOI and double-gate (DG) FinFETs, represents the most challenging task since it involves the Poisson’s solution with two boundary conditions, which is not available when [...]

New Properties and New Challenges in MOS Compact Modeling

Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Srinivas A., Zhang J., Nanyang Technological University, SG

As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing [...]

Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H., Nanyang Technological University, SG

A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]