transients – TechConnect Briefs

Low frequencies anomalies in GaAs FETs

Iqbal M.A., University of the Punjab, PK

The activation energy and capture cross section of the traps founds in GaAs field Effect transistors (GaAs FETS) have been measured both in ohmic and saturation region. A variety of transients found using frequency dispersion, [...]

Compact Modeling of Signal Transients and Integrity Analysis for Dispersionless Interconnect

Zhao W., PKU HKUST Shenzhen Institution of IER., CN

In this paper, a compact model for transient response of the dispersionless interconnects is rigorously derived with resistive, inductive and capacitive load terminations. The proposed compact models are verified by the HSPICE simulation result to [...]

Compact Modeling of Signal Transients for Dispersionless Interconnects With Resistive, Capacitive and Inductive Terminal Loads

Liu Chi, Zhou Z., Lin X., Xia J., Zhang X., He J., Peking University, CN

In this paper, compact models for transient response of dispersionless interconnects are rigorously derived with resistive, inductive and capacitive terminal loads. The proposed compact models are verified by the HSPICE simulation with high accuracy and [...]

Technique for Time and Frequency Dependent Solutions of the Diffusion Equation: Application to temperature of nanoscale devices

Forbes L., Wanalertlak W., Louie M.Y., Oregon State University, US

Typical CMOS device currents have remained around 1mA/um while devices have scaled down. The projection into the 2010 time frame is 0.01um or 10nm dimensions with 0.5V power supplies which results for a minimum dimension [...]