Typical CMOS device currents have remained around 1mA/um while devices have scaled down. The projection into the 2010 time frame is 0.01um or 10nm dimensions with 0.5V power supplies which results for a minimum dimension device in power densities of 5 million W/cm2. Such power densities will result in very high device temperatures even with ideal heat sinks. What is new here is our treatment of time and frequency dependent solutions to the diffusion equation by transmission line techniques and the application to nanoscale devices. There are no known analytical techniques for the time and frequency dependent solutions of the diffusion equation and in particular for the case of the practical devices considered here.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 665 - 668
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation