superlattice – TechConnect Briefs

Modeling of Minibands for Si/SC Quantum Dot Superlattice Solar Cells

Tsai Y-C., Lee M-Y., Li Y., Samukawa S., National Chiao Tung University, TW

Silicon/silicon carbide quantum dot superlattice (Si / SiC QDSL) solar cells with aluminum oxide (Al2O3) passivation experimentally show high short-circuit current (Jsc) of 4.75 mA/cm2. Corresponding numerical result reveals that both the quantum enhancement on [...]

Multiferroic StTiO3/BiFeO3 Superlattice:Theory and Experiment

Roy A., Garg A., Prasad R., Auluck S., Indian Institute of Technology Kanpur, IN

Materials designing using the concept of artificial layered structures has opened up a new vista in process engineering owing to the possibility of evolving unusual and novel functional properties which are often not found in [...]

Self-Assembly and Integration of Ordered, Robust, Three-Dimensional Gold Nanocrystal/Metal Oxide Superlattices

Fan H-Y, Yang K., Gabaldon J.P., Boye D.M., Sigmon T., Malloy K.J., Brinker C.J., Sandia National Laboratories, US

In this presentation, we will report a simple and general method to synthesize ordered, three-dimensional, transparent gold NC/silica superlattices through self-assembly of water-soluble gold NC-micelles and soluble silica under controlled kinetic conditions. NC-micelles were synthesized [...]

Growth of InAs Quantum Dots Using the Strained Superlattices and Their Optical Properties

Leem J-Y, Choi H-K, Jeon M.H., Lee J.W., Leem J-Y, Cho G.S., Choi H-K, Department of Optical Engineering, KR

we have studied the growth of self-assembled quantum dots (QDs) using Stranski-Krastanow growth mode and strain-reducing layers for long-wavelength applications with narrow linewidth in photoluminescence (PL) emission. InAs QDs were grown on the strained superlattices, [...]

Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers

Choi H., Jeong Y., Park Y., Lee J., Leem J-Y, Leem J-Y, Jeon M., Jeong Y., Inje University, KR

We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy [...]

Mechanical and Electronic Properties of Strained Layer Superlattices Studied by Density Functional TB and Path Probability Methods

Masuda-Jindo K., Kikuchi R., Tokyo Institute of Technology, JP

The atomic and electronic structures of semiconductor heterostructures including steps, misfit dislocations and interface disorder are studied by using the density-functional tight-binding (TB) method. Atomic structures of misfit dislocations both edge type 1/2 (001) and [...]

Numerical Simulation of Periodical Distribution of Antisite Defects in Irradiated Semiconductors

Mykhaylovskyy V.V., Russell K.C., Sugakov V.I., Academy of Science of Ukraine, UA

A simulation of radiation-induced instability in binary semiconductors, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can [...]