strained-silicon – TechConnect Briefs

Numerical Study of Carrier Velocity for P-type Strained Silicon MOSFET

Heong Y.W., Ahmadi M.T., Suseno J.E., Ismail R., Universiti Teknologi Malaysia, MY

Abstract In this paper, a numerical study of carrier concentration for P-type strained Silicon MOS is presented. Density of state proportion of Fermi-Dirac intergral that covers the carrier statistics to all degenerate level is studied [...]

Tunnel Field Effect Transistor (TFET) with Strained Silicon Thinfilm Body for Enhanced Drain Current and Pragmatic Threshold Voltage

Kumar M.J., Saurabh S., Indian Institute of Technology, IN

Quantum tunneling devices are very promising as they have very low leakage current and show good scalability. However, the most serious drawback for tunneling devices hampering their wide-scale CMOS application is their low on-current and [...]

Ab-initio Calculations of Uniaxially and Biaxially Tensile Stress Effect

Kim Y.K., Park S.Y., Won T., Inha University, KR

In this paper, we present an ab-initio study on energy configurations, minimum energy path (MEP), and migra-tion energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer for the first [...]

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Kim H-G, Kim J-S, Kim Y.K., Yoon K-S, Kim H-G, Kim J-S, Kim Y.K., Kim H-G, Kim J-S, Kim Y.K., Won T., Inha University, KR

We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply [...]

Investigation of Local-Strain Effect of the Nano-Scale Triple Gate Si/SiGe and SiN/Si Stacking MOS Transistor

Chang C.H., Chou C.Y., Peng C.T., Han C-N, Chiang K.N., National Tsing Hua University, TW

The tensile strained Si, based on the misfit between Si and SiGe gives higher speed and higher drive current for the metal oxide silicon field effect transistors. Based on the strained Si technology, a tri-gate [...]

Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs

Chandrasekaran K., Zhou X., Chiah S.B., Nanyang Technology University, SG

Interest in nanotechnology has grown explosively in recent years because of the potential to beneficially impact almost every aspect of our lives. In the future, we can expect technologies that exploit unique nanometer scale phenomena [...]