Investigation of Local-Strain Effect of the Nano-Scale Triple Gate Si/SiGe and SiN/Si Stacking MOS Transistor

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The tensile strained Si, based on the misfit between Si and SiGe gives higher speed and higher drive current for the metal oxide silicon field effect transistors. Based on the strained Si technology, a tri-gate CMOS transistor is further applied in the current leakage control and chip performance enhancement. Moreover, the “highly-tensile” silicon nitride capping layer is also applied for the strained Si applications, the stress from the silicon nitride capping layer is uniaxially transferred to the NMOS channel through the source-drain region to create tensile strain in NMOS channel.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 688 - 691
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation
ISBN: 0-9767985-2-2