silicon nanowire – TechConnect Briefs

TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]

TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]

Converting Dimensions: A Facile and High-Yield Route for Getting Sub-100 nm Silicon Nanowires

Lee S-H., Yonsei University, KR

For synthesizing uniform sub-100-nm Si nanowires (NWs), we introduce a metal-assisted chemical etching (MCE)-based facile and high-yield route, employing simple thermal annealing and vacuum deposition processes. Under rapid thermal annealing, an ultrathin Ag film on [...]

Integration of SiNWs on MOSFET Gate terminal: From device fabrication to electrical characterization

Taghinejad H., Taghinejad M., Taghinejad H., Taghinejad M., Saeedi A., Abdolahd M., Mohajerzadeh S., University of Tehran, IR

Nanostructured materials provide unique features that could not be achieved in bulk constructions. silicon nanowires (SiNWs) due to the exclusive controllable physical and electrical properties as well as established growth methods are most appealing ones. [...]

Three dimensional metal film catalyst assisted etching of silicon

Sheng W., Shi T., Sun B., Tan X., Jiang T., Liao G., Huazhong University of Science and Technology, CN

Recently metal assisted chemical etching of silicon has emerged as a promising low-cost technology for the fabrication of vertical aligned silicon nanowire arrays[1].The technology comprises two steps: depositing a layer of 2-D porous siliver film [...]

A Novel Silicon Nanowire-based Electron Detector Utilized in Scanning Electron Microscopes

Hajmirzaheydarali M., Akbari M., Mohajerzadeh S., University of Tehran, IR

Electron microscopes are the scientific tools which utilize highly energetic electron beam to overcome the light limitations in the study of specimen in nm scale. Electron detection has an important role in microscopic analysis and [...]

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Zhu G.J., Zhou X., See G.H., Lin S-H, Wei C.Q., Zhang J.B., Nanyang Technological University, SG

A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact [...]