self-heating – TechConnect Briefs

Rapid oxidation and self-heating model of aluminum spherical nanoparticles

Zyskin M., Martirosyan K.S., University of Texas at Brownsville, US

Nanostructured highly-exothermic reactive mixtures, referred to as Nanoenergetic Materials (NM) or Metastable Intermolecular Composites (MIC), may release energy much faster than conventional energetic materials. The size reduction of reactant powders such as aluminum from micro- [...]

Self – Heating Effects in Nanowire Transistors

Hossain A., Raleva K., Vasileska D., Goodnick S.M., Arizona State University, US

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic [...]

RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction

Wan H., Su P., Fung S.K.H., Dept of EECS, UC Berkeley, US

In this paper, the BSIMSOI RF model for FDSOI MOSFET is introduced and verified. Self-heating effect plays an important role in RF S-parameter fitting and the thermal resistance needs to be correctly extracted. A new [...]

Self-Heating Effects in GaN/AlGaN Heterostructure Field-Effect Transistors and Device Structure Optimization

Filippov K.A., Balandin A.A., University of California Riverside, US

In this paper we present results of our simulation of temperature rise in GaN/AlGaN HFETs characterized by different geometry, layered structure, doping density and substrate type. We do note make simplifying assumptions of the uniform [...]

Automatic Generation of RF Compact Models from Device Simulation – Part I: Motivation and methodology

Luryi & A. Pacelli S., State University of New York at Stony Brook, US

We review a recently proposed methodology for automatic generation of equivalent circuits from physical device simulation. The method is based on the calibration of a simplified equivalent-circuit model on simulation results, and can achieve an [...]

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

Pacelli A., Palestri P., Mastrapasqua M., State University of New York-Stony Brook, US

We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and [...]