reliability – TechConnect Briefs

Reliability-Aware Device Modeling and Implications on Circuit Aging Simulations

Zhang L., Ma C., Chan M., Hong Kong University of Science and Technology, HK

Device reliability and circuit aging are becoming key design concerns with advanced CMOS technologies. In the traditional way, a reliability model describing the device parameter shifts in the time domain is independent of a device [...]

Stable Magnetic Isotopes as New Trend in Nanonuclear Biotechnology

Koltover V., Institute of Problems of Chemical Physics, Russian Academy of Sciences, RU

With dimensions of the order of tens angstroms, biomolecular devices are assigned, in modern terminology, to objects of “nanophysics”. At the same time, all of them are composed from chemical elements many of which have [...]

Reliability Evaluation of Inkjet-Printed Silver Patterns for Application to Printed Circuit Board

Shin K.-Y., Kang H.S., Kang K.T., Kang H.S., Kang K.T., Hwang J.Y., Lee S-H., Kim J-M, Korea Institute of Industrial Technology, KR

Recently, several studies on the reliability of inkjet-printed patterns have been conducted to evaluate inkjet printing technology as a fabrication process for the printed circuit board industry. However, the methods and standards for evaluating the [...]

A novel simulation methodology for full chip-package thermo-mechanical reliability investigations

Karunamurthy B., Ostermann T., Bhattacharya M., KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH, AT

A methodology for simulating the accurate structural details of a non-planarized technology chips is presented. This approach uses a virtual semiconductor fabrication technique to create geometry and finite element mesh on complex chip topology features. [...]

Nanolayer Interconnect Structures Ageing by Beam Resonance Method

Janczyk G., Bieniek T., Instytut Technologii Elektronowej, PL

This paper discusses important aspects of investigation on interconnects reliability and ageing which has to be considered in nanoscale. The research is ongoing and applies to structures like SiP, SoC where mechanical stress caused by [...]

Impact of Channel Length and Gate Width of a N-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Stud

Ashraf N., Joshi S., Vasileska D., ASU, US

Previously we have reported threshold voltage fluctuations caused by presence of random distribution of dopant ions in the channel region of a 45 nm n-MOSFET and random single interface trap positioned from source to drain [...]

Keywords: reliability

Reliability-Aware Device Modeling and Implications on Circuit Aging Simulations

Stable Magnetic Isotopes as New Trend in Nanonuclear Biotechnology

Reliability Evaluation of Inkjet-Printed Silver Patterns for Application to Printed Circuit Board

A novel simulation methodology for full chip-package thermo-mechanical reliability investigations

Nanolayer Interconnect Structures Ageing by Beam Resonance Method

Impact of Channel Length and Gate Width of a N-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Stud

Reliability Prediction of Single-Crystal Silicon MEMS Using Dynamic Raman Spectroscopy

Stable Magnetic Isotopes and Reliability of Biomolecular Nanoreactors

Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance