quantum effects – TechConnect Briefs

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]

Compact Models for Double Gate MOSFET with Quantum Mechanical Effects using Lambert Function

Abebe H., Morris H., Cumberbatch E., Tyree V., University of Southern California, ISI, US

This paper is a continuation of the work we presented in the 2006 IEEE UGIM Proceedings. Iterative compact device models with quantum mechanical effects for a Double Gate (DG) MOSFET are presented using the Lambert [...]

Compact modeling of drain current in Independently Driven Double-Gate MOSFETs

Munteanu D., Autran J-L, Loussier X., Tintori O., L2MP-CNRS, FR

As CMOS scaling is approaching its limits, Double-Gate (DG) MOSFET is envisaged as a possible alternative to the conventional bulk MOSFET. In spite of excellent electrical performances due to its multiple conduction surfaces, conventional DG [...]

Compact Model of drain-current in Double-Gate MOSFETs including carrier quantization and short-channel effects

Loussier X., Munteanu D., Autran J-L, Harrison S., Cerutti R., L2MP, FR

Double-Gate (DG) structure has been in the last years the object of intensive research because its enormous potentiality to push back the integration limits to which conventional devices are subjected. Although the operation of DG [...]

Compact Modeling of Threshold Voltage in Double-Gate MOSFET including Quantum Mechanical and Short Channel Effects

Nehari K., Munteanu D., Autran J-L, Harrison S., Tintori O., Skotnicki T., L2MP-CNRS, FR

Compact modeling of Double-Gate MOSFET incites very much interest presently, since DG is considered to be the best candidate for the integration at the end-of-roadmap. The aim of this work is to develop a short-channel [...]

A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors including 2D-Quantum Confinement Effects

Nehari K., Autran J-L, Munteanu D., Bescond M., L2MP-CNRS, FR

A quantum-mechanical compact model of the threshold voltage for quantum-wire (QW) MOSFETs has been developed. This approach is based on analytical 2D solutions for the decoupled Schrödinger and Poisson equations solved in a 2D cross-section [...]

Compact Model of Multiple-gate SOI MOSFETs

Iñiguez B., Hamid H.A., Jiménez D., Roig J., Universitat Rovira i Virgili, ES

In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., [...]

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR

A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

Ultrasmall Devices: Are We Ready for Quantum Effects?

Ferry D.K., Arizona State University, US

It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the [...]